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IPS50R520CPAKMA1

  • IPS50R520CPAKMA1
  • IPS50R520CPAKMA1

IPS50R520CPAKMA1

IPS50R520CPAKMA1

Infineon Technologies

MOSFET N-CH 500V 7.1A TO251-3

SOT-23

IPS50R520CPAKMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 66W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 520m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7.1A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V

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