IPU60R950C6BKMA1

new-10%

Manufacturer part number:IPU60R950C6BKMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 650V 4.4A 3-Pin(3+Tab) TO-251

Case Package:SOT-23

Datasheet:IPU60R950C6BKMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	CoolMOS™
Pbfree Code	no
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Number of Elements	1
Power Dissipation-Max	37W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	37W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	950m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 130μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 100V
Current - Continuous Drain (Id) @ 25°C	4.4A Tc
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 10V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	4.4A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain-source On Resistance-Max	0.95Ohm
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	46 mJ
Height	6.22mm
Length	6.73mm
Width	2.41mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead