Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IPU80R1K0CEBKMA1

IPU80R1K0CEBKMA1

IPU80R1K0CEBKMA1

Infineon Technologies

MOSFET N-CH 800V 5.7A TO251-3

SOT-23

IPU80R1K0CEBKMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Supplier Device Package PG-TO251-3
Weight 343.085929mg
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 83W Tc
Element Configuration Single
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 5.7A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 800V
Input Capacitance 785pF
Drain to Source Resistance 950mOhm
Rds On Max 950 mΩ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.798852 $0.798852
10 $0.753634 $7.53634
100 $0.710975 $71.0975
500 $0.670731 $335.3655
1000 $0.632765 $632.765

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News