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IPW65R045C7300XKSA1

IPW65R045C7300XKSA1

IPW65R045C7300XKSA1

Infineon Technologies

MOSFET N-CH 650V TO-247-3

SOT-23

IPW65R045C7300XKSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Series CoolMOS™ C7
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 227W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.25mA
Input Capacitance (Ciss) (Max) @ Vds 4.34nF @ 400V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:2783 items

About IPW65R045C7300XKSA1

The IPW65R045C7300XKSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 650V TO-247-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPW65R045C7300XKSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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