Through Hole Tube Obsolete EAR99 Gate Drivers ICs Inverting 2 200V V 8-DIP (0.300, 7.62mm) IR2011 High-Side or Low-Side
SOT-23
IR2011 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
8-DIP (0.300, 7.62mm)
Surface Mount
NO
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
1996
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Technology
CMOS
Voltage - Supply
10V~20V
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
15V
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IR2011
JESD-30 Code
R-PDIP-T8
Qualification Status
Not Qualified
Input Type
Inverting
Rise / Fall Time (Typ)
35ns 20ns
Interface IC Type
HALF BRIDGE BASED MOSFET DRIVER
Channel Type
Independent
Number of Drivers
2
Output Peak Current Limit-Nom
1A
Driven Configuration
High-Side or Low-Side
Gate Type
N-Channel MOSFET
Current - Peak Output (Source, Sink)
1A 1A
High Side Driver
YES
Logic Voltage - VIL, VIH
0.7V 2.2V
High Side Voltage - Max (Bootstrap)
200V
Height Seated (Max)
5.33mm
Length
9.88mm
RoHS Status
Non-RoHS Compliant
IR2011 Product Details
IR2011 Description
The IR2011 is a high-speed, high-power MOSFET driver with separate high and low side referenced output channels. Down to 3.0V logic, logic inputs are compatible with normal CMOS or LSTTL output. A high pulse current buffer stage is used in the output drivers to reduce driver cross-conduction. The propagation delays are matched to make high-frequency applications easier to employ. The floating channel can be utilized to drive a high-side N-channel power MOSFET that operates at 200 volts. Ruggedized monolithic architecture is possible because to proprietary HVIC and latch immune CMOS technology.
IR2011 Features
Negative transient voltage tolerant, dV/dt immune
The supply voltage for gate drives ranges from 10 to 20 volts.