IR2104PBF Overview

The 8-DIP (0.300, 7.62mm) package offers greater flexibility.A packaging method of Tube is indicated.In the direction of Through Hole, gate drivers is mounted.WGate driversh a 10V~20V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.There is a temperature range for this device of -40°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.The configuration is based on 8 terminations.There are various related parts under its base part number IR2104PBF.Mosfet driver is mounted using Through Hole.Mosfet driver is configured wMosfet driverh 8 pins when designing.In addition, it is specifically designed to operate with a supply voltage of 15V.360mA is the maximum output current.This subcategory of MOSFET Drivers has a number of useful electronic components.Max (Bootstrap) can be as high as 600V.Based on its basis, it integrates 2 outputs.This device is capable of delivering 210mA current.This device has a maximum power dissipation of 1W, indicating that it is capable of reducing power loss without overheating.For higher stability, the supply current should be kept at 270μA.The power supply 15V of the product solves the power supply problem for a variety of applications.Mosfet gate drivers produces a voltage of 620V.A maximum output voltage of 20V should be maintained.

IR2104PBF Features

Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W

IR2104PBF Applications

There are a lot of Infineon Technologies IR2104PBF gate drivers applications.

• serial peripheral interface (SPI), I2C
• AC-DC Inverters
• Solar inverters
• High-voltage isolated DC-DC converters
• Motor Controls
• High power buffers
• Portable Media Players
• High frequency line drivers
• Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
• Active filtering