IR2112-1PBF Overview

A higher level of flexibility is provided by its 14-DIP (0.300, 7.62mm), 13 Leads package.A packaging method of Tube is indicated.Gate drivers is configured wGate driversh 2 drivers.Through Hole is mounted in the way.In the absence of a 10V~20V supply voltage, its superiority can be demonstrated.IGBT, N-Channel MOSFET is the gate type used for this design.-40°C~150°C TJ is the allowed temperature range for this device.Non-Inverting is used as its input type.Under its base part number IR2112-1PBF, various related parts can be found.In this case, Through Hole indicates how the device is to be mounted.The pins are configured with 14 when designing the chip.Mosfet driver employs an interface chip called HALF BRIDGE BASED MOSFET DRIVER as Mosfet drivers interface chip.An output current as high as 500mA can be achieved at maximum power.A high-side voltage can be set up to 600V (Bootstrap).The output current can be set to 200mA.Based on the maximum power dissipation of 1.6W, it is clear that it is capable of transferring and conducting power losses without becoming overheated.As a precaution, make sure the supply current is kept at 180μA.A voltage of 10V is output by this device.

IR2112-1PBF Features

Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.6W

IR2112-1PBF Applications

There are a lot of Infineon Technologies IR2112-1PBF gate drivers applications.

• Portable computers
• Head-up and Head mounted displays
• Broadcast equipment
• Commercial and agricultural vehicles (CAV)
• Dual-Battery Systems
• Industrial motor drives - compact, standard, premium, servo drives
• Commercial air-conditioning (CAC)
• Industrial Modules
• 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
• Pulse transformer drivers