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IR2112PBF

  • IR2112PBF
  • IR2112PBF

IR2112PBF

IR2112PBF

Infineon Technologies

Through Hole Tube Active EAR99 Gate Drivers ICs Non-Inverting 600V V 14-DIP (0.300, 7.62mm) IR2112PBF High-Side or Low-Side

SOT-23

IR2112PBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 14-DIP (0.300, 7.62mm)
Number of Pins 14
Manufacturer Package Identifier 14-Lead PDIP
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 1996
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14
ECCN Code EAR99
Type Integrated Circuit (IC)
Terminal Finish Matte Tin (Sn)
Subcategory MOSFET Drivers
Max Power Dissipation 1.6W
Technology CMOS
Voltage - Supply 10V~20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 250
Number of Functions 1
Supply Voltage 15V
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IR2112PBF
Number of Outputs 2
Output Voltage 20V
Max Output Current 500mA
Operating Supply Voltage 15V
Nominal Supply Current 180μA
Power Dissipation 1.6W
Output Current 250mA
Max Supply Current 180μA
Propagation Delay 180 ns
Input Type Non-Inverting
Turn On Delay Time 30 ns
Max Output Voltage 20V
Rise Time 130ns
Fall Time (Typ) 65 ns
Turn-Off Delay Time 30 ns
Min Output Voltage 10V
Rise / Fall Time (Typ) 80ns 40ns
Channel Type Independent
Turn On Time 0.18 μs
Output Peak Current Limit-Nom 0.5A
Driven Configuration High-Side or Low-Side
Gate Type IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink) 250mA 500mA
High Side Driver YES
Logic Voltage - VIL, VIH 6V 9.5V
Turn Off Time 0.16 μs
High Side Voltage - Max (Bootstrap) 600V
Height 4.9276mm
Length 20.1676mm
Width 7.11mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.46000 $3.46
10 $3.10600 $31.06
100 $2.54500 $254.5
500 $2.16654 $1083.27
1,000 $1.82721 $1.82721
IR2112PBF Product Details

IR2112PBF Overview


For greater flexibility, its 14-DIP (0.300, 7.62mm) package is used.The packaging method is indicated by Tube.The device is mounted in the direction of Through Hole.A supply voltage of 10V~20V demonstrates its superiority.A gate type of IGBT, N-Channel MOSFET has been used in its design.This device is allowed to operate in a temperature range of -40°C~150°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.There are 14 terminations to form the base of its configuration.You will find various related parts under the base part number IR2112PBF.In this case, Through Hole indicates how the device is mounted.Mosfet driver is configured wMosfet driverh 14 pins when designing.The device is specifically designed to operate at 15V volts.There is a maximum output current of 500mA.This subcategory of MOSFET Drivers has a number of useful electronic components.Maximum (Bootstrap) voltage can be up to 600V.Based on its basis, it integrates 2 outputs.Mosfet driver supports an output current of 250mA.Using 1.6W as an example, the maximum power dissipation shows how well it is able to transfer and conduct power loss without becoming overheated.To maintain higher stability, the supply current should always be 180μA.When this voltage is produced, it is marked as 20V.Mosfet gate drivers is recommended that the operating voltage of the supply be set at 15V.A maximum voltage of 20V should be maintained for the output voltage.

IR2112PBF Features


Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.6W

IR2112PBF Applications


There are a lot of Infineon Technologies IR2112PBF gate drivers applications.

  • Refrigerator
  • Isolated Supplies for Motor Control
  • 3-Phase Motor Inverter Driver
  • Active Clamp Flyback or Forward and Synchronous Rectifier
  • Motor Drives
  • LCD/LCoS/DLP portable and embedded pico projectors
  • Welding
  • Power factor correction (PFC) circuits
  • Industrial Modules
  • High power buffers

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