Through Hole Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 1 600V V 8-DIP (0.300, 7.62mm) IR2117 High-Side
SOT-23
IR2117 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
8-DIP (0.300, 7.62mm)
Surface Mount
NO
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
1996
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Technology
CMOS
Voltage - Supply
10V~20V
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
15V
Terminal Pitch
2.54mm
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IR2117
JESD-30 Code
R-PDIP-T8
Qualification Status
Not Qualified
Input Type
Non-Inverting
Rise / Fall Time (Typ)
80ns 40ns
Interface IC Type
BUFFER OR INVERTER BASED MOSFET DRIVER
Channel Type
Single
Number of Drivers
1
Turn On Time
0.2 μs
Output Peak Current Limit-Nom
0.5A
Driven Configuration
High-Side
Gate Type
IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink)
250mA 500mA
High Side Driver
YES
Logic Voltage - VIL, VIH
6V 9.5V
High Side Voltage - Max (Bootstrap)
600V
Height Seated (Max)
5.33mm
Length
9.88mm
Width
7.62mm
RoHS Status
Non-RoHS Compliant
IR2117 Product Details
IR2117 Description
IR2117 belongs to the family of single-channel power MOSFET and IGBT drivers with high voltage and high speed, which is manufactured by Infineon Technologies based on proprietary HVIC and latch immune CMOS technologies. These technologies are able to make ruggedized monolithic construction possible. Its floating channel is designed for the bootstrap operation of N-channel power MOSFETs or IGBTs.
IR2117 Features
Lead-free
A high pulse current buffer stage
Ruggedized monolithic construction
Available in the 8-Lead PDIP package
Proprietary HVIC and latch immune CMOS technologies