Through Hole Tube Obsolete Gate Drivers ICs Inverting 6 600V V 28-DIP (0.600, 15.24mm) IR2135 Half-Bridge
SOT-23
IR2135 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
28-DIP (0.600, 15.24mm)
Operating Temperature
125°C TJ
Packaging
Tube
Published
2005
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Supply
10V~20V
Base Part Number
IR2135
Input Type
Inverting
Rise / Fall Time (Typ)
90ns 40ns
Channel Type
3-Phase
Number of Drivers
6
Driven Configuration
Half-Bridge
Gate Type
IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink)
250mA 500mA
Logic Voltage - VIL, VIH
0.8V 2.2V
High Side Voltage - Max (Bootstrap)
600V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
52
$10.54731
$548.46012
IR2135 Product Details
IR2135 3-PHASE BRIDGE DRIVER in 28-DIP package are manufactured by Infenion Technology, which is used for A comprehensive portfolio of power management, sensing, control and high-voltage semiconductor technologies for modern appliances.
IR2135 Description : The IR2135 is a three-phase, high-voltage, high-speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Ruggedized monolithic construction is possible because to exclusive HVIC technology. Down to 2.5V logic, logic inputs are compatible with CMOS or LSTTL outputs. An external current sensor resistor offers analog feedback of bridge current via an independent operational amplifier. This resistor can also be used to provide a current trip function that terminates all six outputs. All six outputs can be turned off with the shutdown function. When an over-current or undervoltage shutdown occurs, an open drain FAULT signal is generated. The FLT-CLR lead is used to clear fault conditions. A high pulse current buffer stage is used in the output drivers to reduce driver cross-conduction. The propagation delays are matched to make high frequency applications easier. The floating channels can be used to drive high-side N-channel power MOSFETs or IGBTs operating at 600 or 1200 volts.
IR2135 Features : ? Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune ? Gate drive supply range from 10V/12V to 20V DC and up to 25V for transient ? Undervoltage lockout for all channels ? Over-current shut down turns off all six drivers ? Independent 3 half-bridge drivers ? Matched propagation delay for all channels ? 2.5V logic compatible ? Outputs out of phase with inputs ? All parts are also available LEAD-FREE
IR2135 Applications : A comprehensive portfolio of power management, sensing, control and high-voltage semiconductor technologies for modern appliances. Industrial solutions range from discrete MOSFETs and IGBTs to integrated platforms for motor control.