IRF200P223

new-10%

Manufacturer part number:IRF200P223

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 11.5m Ω @ 60A, 10V ±20V 5094pF @ 50V 102nC @ 10V 200V TO-247-3

Case Package:SOT-23

Datasheet:IRF200P223 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	StrongIRFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	313W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds	5094pF @ 50V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	102nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-247AC
Drain Current-Max (Abs) (ID)	100A
Drain-source On Resistance-Max	0.0115Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	541 mJ
RoHS Status	ROHS3 Compliant