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IRF2805LPBF

IRF2805LPBF

IRF2805LPBF

Infineon Technologies

MOSFET N-CH 55V 135A TO-262

SOT-23

IRF2805LPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 135A
Power Dissipation-Max 200W Tc
Power Dissipation 200W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7m Ω @ 104A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 135A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 135A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Height 9.65mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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