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IRF3415STRRPBF

IRF3415STRRPBF

IRF3415STRRPBF

Infineon Technologies

MOSFET N-CH 150V 43A D2PAK

SOT-23

IRF3415STRRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.8W Ta 200W Tc
Element Configuration Single
Power Dissipation 3.8W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 42mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 69 ns
Turn-Off Delay Time 71 ns
Continuous Drain Current (ID) 43A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Input Capacitance 2.4nF
Drain to Source Resistance 42mOhm
Rds On Max 42 mΩ
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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