IRF3704ZCSTRLP

new-10%

Manufacturer part number:IRF3704ZCSTRLP

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 67A D2PAK

Case Package:SOT-23

Datasheet:IRF3704ZCSTRLP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	57W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.9m Ω @ 21A, 10V
Vgs(th) (Max) @ Id	2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1220pF @ 10V
Current - Continuous Drain (Id) @ 25°C	67A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	42A
Drain-source On Resistance-Max	0.0079Ohm
Pulsed Drain Current-Max (IDM)	260A
DS Breakdown Voltage-Min	20V
Avalanche Energy Rating (Eas)	36 mJ
RoHS Status	RoHS Compliant