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IRF3706

  • IRF3706
  • IRF3706

IRF3706

IRF3706

Infineon Technologies

IRF3706 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF3706 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 88W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 10V
Current - Continuous Drain (Id) @ 25°C 77A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Vgs (Max) ±12V
RoHS Status Non-RoHS Compliant
IRF3706 Product Details

IRF3706 Description


IRF3706 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 20V. The operating temperature of the IRF3706 is -55°C~175°C TJ and its maximum power dissipation is 88W Tc. IRF3706 has 3 pins and it is available in Tube packaging way. The Drain to Source Voltage of IRF3706 is 20V.



IRF3706 Features


  • Ultra-Low Gate Impedance

  • Very Low RDS(on) at 4.5V VGS

  • Fully Characterized Avalanche Voltage and Current



IRF3706 Applications


  • High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use

  • High Frequency Buck Converters for Computer Processor Power


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