IRF3709LPBF

new-10%

Manufacturer part number:IRF3709LPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 90A TO-262

Case Package:SOT-23

Datasheet:IRF3709LPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	TO-262
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	90A
Power Dissipation-Max	3.1W Ta 120W Tc
Element Configuration	Single
Power Dissipation	120W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2672pF @ 16V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	41nC @ 5V
Rise Time	171ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9.2 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	90A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	2.672nF
Drain to Source Resistance	10.5mOhm
Rds On Max	9 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free