IRF3710STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF3710STRLPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
23MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
57A
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
23m Ω @ 28A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3130pF @ 25V
Current - Continuous Drain (Id) @ 25°C
57A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Rise Time
58ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
47 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
57A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Avalanche Energy Rating (Eas)
280 mJ
Recovery Time
220 ns
Nominal Vgs
4 V
Height
4.826mm
Length
10.668mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.21000
$2.21
500
$2.1879
$1093.95
1000
$2.1658
$2165.8
1500
$2.1437
$3215.55
2000
$2.1216
$4243.2
2500
$2.0995
$5248.75
IRF3710STRLPBF Product Details
IRF3710STRLPBF MOSFET Description
Advanced processing techniques create extraordinarily low on-resistance per silicon area in the IRF3710 57A 100V N-Channel Power MOSFET. This advantage, when paired with the high switching speed and ruggedized device architecture of HEXFET power MOSFETs, offers the designer a very efficient and dependable device for usage in many applications. At power dissipation levels of up to 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and packaging cost contribute to its widespread use in the industry.