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IRF5210STRLPBF

IRF5210STRLPBF

IRF5210STRLPBF

Infineon Technologies

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 60m Ω @ 38A, 10V ±20V 2780pF @ 25V 230nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

IRF5210STRLPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 60mOhm
Additional Feature HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory Other Transistors
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -40A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Rise Time 63ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) -40A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Dual Supply Voltage 100V
Recovery Time 260 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs -4 V
Height 4.83mm
Length 10.668mm
Width 9.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.35000 $3.35
500 $3.3165 $1658.25
1000 $3.283 $3283
1500 $3.2495 $4874.25
2000 $3.216 $6432
2500 $3.1825 $7956.25
IRF5210STRLPBF Product Details

IRF5210STRLPBF Description

IRF5210STRLPBF power MOSFETs are made with proven silicon methods and can be used in a variety of applications including DC motors, inverters, SMPS, lights, load switches, and battery-powered applications. For ease of design, the IRF5210STRLPBF is offered in a variety of surface mount and through-hole packages with industry-standard footprints.


IRF5210STRLPBF Features

  • Advanced Process Technology

  • Ultra-Low On-Resistance

  • 150°C Operating Temperature

  • Fast Switching

  • Repetitive Avalanche Allowed up to Tjmax

  • Some Parameters are Different from IRF5210S/L

  • P-Channel

  • Lead-Free


IRF5210STRLPBF Applications

  • Switching applications

  • Industrial: Aerospace & defense/Appliances/Building automation/Electronic point of sale (EPOS)/Factory automation & control/Grid infrastructure/Industrial transport (non-car & non-light truck)/Lighting/Medical/Motor drives/Power delivery/Pro audio, video & signage/Test & measurement

  • Enterprise systems: Datacenter & enterprise computing/Enterprise machine/Enterprise projectors

  • Personal electronics: Connected peripherals & printers/Data storage/Gaming/Home theater & entertainment/Mobile phones/PC & notebooks/Portable electronics/Tablets/TV/Wearables (non-medical)




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