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IRF6100

IRF6100

IRF6100

Infineon Technologies

IRF6100 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF6100 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-FlipFet™
Number of Pins 4
Supplier Device Package 4-FlipFet™
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Current Rating -5.1A
Power Dissipation-Max 2.2W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 65mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.1A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Continuous Drain Current (ID) 5.1A
Input Capacitance 1.23nF
Rds On Max 65 mΩ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
IRF6100 Product Details

Description


The IRF6100 is a HEXFET? Power MOSFET. International Rectifier offers genuine chip-scale packaging. Extremely low on-resistance and the highest power densities in the industry have been made accessible for battery and load management applications through the use of cutting-edge processing techniques and a novel packaging architecture. These advantages, along with the ruggedized device design for which International Rectifier is renowned, give the designer access to a very effective and dependable tool.

The FlipFET? package has a profile of less than.8mm and has a footprint that is one-third that of a comparable SOT-23 package. This makes the FlipFET? the ideal device for applications where printed circuit board space is at a premium and in extremely thin application contexts, such as battery packs, cell phones, and PCMCIA cards. This is combined with the low thermal resistance of the die-level device.



Features


  • One-third Footprint of SOT-23

  • Super Low Profile (<.8mm)

  • Available Tested on Tape & Reel

  • Ultra Low RDS(on) per Footprint Area

  • Low Thermal Resistance

  • P-Channel MOSFET



Applications


  • Battery packs

  • Cell phones

  • PCMCIA cards

  • Solar inverters

  • Automotive applications

  • Switch, buck and synchronous rectification

  • Small motor control


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