IRF6201TRPBF

new-10%

IRF6201TRPBF

Manufacturer part number:IRF6201TRPBF

Manufacturer:Infineon Technologies

Description:IRF6201TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF6201TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	29 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.45m Ω @ 27A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	8555pF @ 16V
Current - Continuous Drain (Id) @ 25°C	27A Ta
Gate Charge (Qg) (Max) @ Vgs	195nC @ 4.5V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	265 ns
Turn-Off Delay Time	320 ns
Continuous Drain Current (ID)	27A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.00245Ohm
Drain to Source Breakdown Voltage	20V
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free