IRF6607TR1

new-10%

Manufacturer part number:IRF6607TR1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 27A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6607TR1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Silver
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MT
Number of Pins	7
Supplier Device Package	DIRECTFET™ MT
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.6W Ta 42W Tc
Element Configuration	Single
Power Dissipation	3.6W
Turn On Delay Time	60 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6930pF @ 15V
Current - Continuous Drain (Id) @ 25°C	27A Ta 94A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 4.5V
Rise Time	8ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 7V
Vgs (Max)	±12V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	27A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Input Capacitance	6.93nF
Drain to Source Resistance	3.3mOhm
Rds On Max	3.3 mΩ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Contains Lead