IRF6635TR1PBF

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IRF6635TR1PBF

Manufacturer part number:IRF6635TR1PBF

Manufacturer:Infineon Technologies

Description:IRF6635TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF6635TR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	5
Supplier Device Package	DIRECTFET™ MX
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	1.8MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	32A
Number of Elements	1
Power Dissipation-Max	2.8W Ta 89W Tc
Power Dissipation	89W
Turn On Delay Time	21 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.8mOhm @ 32A, 10V
Vgs(th) (Max) @ Id	2.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5970pF @ 15V
Current - Continuous Drain (Id) @ 25°C	32A Ta 180A Tc
Gate Charge (Qg) (Max) @ Vgs	71nC @ 4.5V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8.3 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Input Capacitance	5.97nF
Drain to Source Resistance	2.4mOhm
Rds On Max	1.8 mΩ
Nominal Vgs	1.8 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free