IRF6711STR1PBF

new-10%

Manufacturer part number:IRF6711STR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 19A DIRECTFET-SQ

Case Package:SOT-23

Datasheet:IRF6711STR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric SQ
Number of Pins	5
Supplier Device Package	DIRECTFET™ SQ
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.2W Ta 42W Tc
Power Dissipation	42W
Turn On Delay Time	7.7 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1810pF @ 13V
Current - Continuous Drain (Id) @ 25°C	19A Ta 84A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V
Rise Time	13ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.4 ns
Turn-Off Delay Time	7.1 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Input Capacitance	1.81nF
Drain to Source Resistance	6.5mOhm
Rds On Max	3.8 mΩ
Nominal Vgs	1.8 V
Height	506μm
Length	4.826mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant