IRF6785MTRPBF

new-10%

Manufacturer part number:IRF6785MTRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 3.4A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6785MTRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MZ
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	HEXFET®
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 57W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	57W
Case Connection	DRAIN
Turn On Delay Time	6.2 ns
FET Type	N-Channel
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	100m Ω @ 4.2A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.4A Ta 19A Tc
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Rise Time	8.6ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	7.2 ns
Continuous Drain Current (ID)	3.4A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	19A
Drain-source On Resistance-Max	0.1Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	27A
Avalanche Energy Rating (Eas)	33 mJ
Height	506μm
Length	6.35mm
Width	5.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant