IRF6894MTR1PBF

new-10%

Manufacturer part number:IRF6894MTR1PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 32A DIRECTFET

Case Package:SOT-23

Datasheet:IRF6894MTR1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Number of Pins	7
Supplier Device Package	DIRECTFET™ MX
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	1.3MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.1W Ta 54W Tc
Power Dissipation	2.1W
Turn On Delay Time	16 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.3mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	2.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	4160pF @ 13V
Current - Continuous Drain (Id) @ 25°C	32A Ta 160A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 4.5V
Rise Time	42ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	32A
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	25V
Input Capacitance	4.16nF
FET Feature	Schottky Diode (Body)
Drain to Source Resistance	1.7mOhm
Rds On Max	1.3 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free