IRF7301TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website
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IRF7301TRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
50mOhm
Additional Feature
ULTRA LOW RESISTANCE
Voltage - Rated DC
20V
Max Power Dissipation
2W
Terminal Form
GULL WING
Current Rating
5.2A
Base Part Number
IRF7301PBF
Number of Elements
2
Row Spacing
6.3 mm
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
9 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 2.6A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
660pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Rise Time
42ns
Fall Time (Typ)
51 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
5.2A
Threshold Voltage
700mV
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Recovery Time
44 ns
FET Feature
Logic Level Gate
Nominal Vgs
700 mV
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.334302
$0.334302
10
$0.315380
$3.1538
100
$0.297528
$29.7528
500
$0.280687
$140.3435
1000
$0.264799
$264.799
IRF7301TRPBF Product Details
IRF7301TRPBF Description
The fifth generation HEXFET of the International Rectifier Company adopts advanced technology to achieve the lowest possible on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device for use in a variety of applications.
SO-8 has been improved through a customized framework to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications. With these improvements, a variety of devices can be used in applications that significantly reduce circuit board space. The package is designed for gas phase, infrared or wave soldering technology. In a typical PCB installation application, it is possible to consume more than 0.8W.
IRF7301TRPBF Features
Generation VTechnology
Ultra Low On-Resistance
DualN-Channel Mosfet
Surface Mount
Available in Tape&Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7301TRPBF Applications
provides designers with an extremely efficient device for use in a variety of applications.