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IRF7471TRPBF

IRF7471TRPBF

IRF7471TRPBF

Infineon Technologies

MOSFET N-CH 40V 10A 8-SOIC

SOT-23

IRF7471TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 40V
Technology MOSFET (Metal Oxide)
Current Rating 10A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2820pF @ 20V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 4.5V
Rise Time 2.7ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 2.82nF
Drain to Source Resistance 16mOhm
Rds On Max 13 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free

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