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IRF7601TR

IRF7601TR

IRF7601TR

Infineon Technologies

MOSFET N-CH 20V 5.7A MICRO8

SOT-23

IRF7601TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Surface Mount YES
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.7A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 5.7A
Drain-source On Resistance-Max 0.035Ohm
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 20V
RoHS Status Non-RoHS Compliant

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