IRF7707

new-10%

Manufacturer part number:IRF7707

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 20V 7A 8-TSSOP

Case Package:SOT-23

Datasheet:IRF7707 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-7A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.5W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2361pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7A Ta
Gate Charge (Qg) (Max) @ Vgs	47nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Continuous Drain Current (ID)	7A
JEDEC-95 Code	MO-153AA
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.022Ohm
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	28A
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead