IRF7811WTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF7811WTRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
14A
Number of Elements
1
Power Dissipation-Max
3.1W Ta
Power Dissipation
1W
Turn On Delay Time
11 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
12mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2335pF @ 16V
Current - Continuous Drain (Id) @ 25°C
14A Ta
Gate Charge (Qg) (Max) @ Vgs
33nC @ 5V
Rise Time
11ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V
Vgs (Max)
±12V
Fall Time (Typ)
9.9 ns
Turn-Off Delay Time
29 ns
Continuous Drain Current (ID)
14A
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
30V
Input Capacitance
2.335nF
Drain to Source Resistance
12mOhm
Rds On Max
12 mΩ
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRF7811WTRPBF Product Details
IRF7811WTRPBF Description
IRF7811WTRPBF is a HEXFET? Power MOSFET for DC-DC Converters. The Infineon IRF7811WTRPBF employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high-efficiency DC-DC converters that power the latest generation of microprocessors.