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IRF8304MTR1PBF

IRF8304MTR1PBF

IRF8304MTR1PBF

Infineon Technologies

MOSFET N-CH 30V 28A MX

SOT-23

IRF8304MTR1PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 7
Supplier Device Package DIRECTFET™ MX
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.8W Ta 100W Tc
Power Dissipation 2.8W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 28A Ta 170A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Rise Time 22ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 170A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 4.7nF
Drain to Source Resistance 3.2mOhm
Rds On Max 2.2 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

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