IRFBL3703

new-10%

Manufacturer part number:IRFBL3703

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 260A SUPER D2PAK

Case Package:SOT-23

Datasheet:IRFBL3703 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	Super D2-Pak
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tube
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-F2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.8W Ta 300W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5m Ω @ 76A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	260A Tc
Gate Charge (Qg) (Max) @ Vgs	209nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	7V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	260A
Drain-source On Resistance-Max	0.0036Ohm
Pulsed Drain Current-Max (IDM)	1000A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	1700 mJ
RoHS Status	Non-RoHS Compliant