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IRFH5207TRPBF

IRFH5207TRPBF

IRFH5207TRPBF

Infineon Technologies

MOSFET N-CH 75V 13A 8-PQFN

SOT-23

IRFH5207TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 9.6MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 105W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.6m Ω @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2474pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Ta 71A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.1 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 71A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Height 838.2μm
Length 5.9944mm
Width 5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.601622 $0.601622
10 $0.567567 $5.67567
100 $0.535441 $53.5441
500 $0.505134 $252.567
1000 $0.476540 $476.54

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