IRFH5300TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFH5300TR2PBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Supplier Device Package
PQFN (5x6) Single Die
Packaging
Cut Tape (CT)
Published
2009
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Element Configuration
Single
Power Dissipation
3.6W
Turn On Delay Time
26 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
7200pF @ 15V
Current - Continuous Drain (Id) @ 25°C
40A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Rise Time
30ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
31 ns
Continuous Drain Current (ID)
100A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Input Capacitance
7.2nF
Recovery Time
51 ns
Drain to Source Resistance
1.4mOhm
Rds On Max
1.4 mΩ
Nominal Vgs
1.8 V
Height
838.2μm
Length
5mm
Width
5.0038mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
IRFH5300TR2PBF Product Details
IRFH5300TR2PBF Description
IRFH5300TR2PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 30V. The operating temperature of the IRFH5300TR2PBF is -55°C~150°C and its maximum power dissipation is 3.6W. IRFH5300TR2PBF has 8 pins and it is available in Cut Tape (CT) packaging way.