IRFH7185TRPBF

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IRFH7185TRPBF

Manufacturer part number:IRFH7185TRPBF

Manufacturer:Infineon Technologies

Description:IRFH7185TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFH7185TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	FASTIRFET™, HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Base Part Number	IRFH7185
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.6W Ta 160W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.6W
Case Connection	DRAIN
Turn On Delay Time	6.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	3.6V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	2320pF @ 50V
Current - Continuous Drain (Id) @ 25°C	19A Ta
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Rise Time	9.9ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	3.9 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	19A
Threshold Voltage	3.6V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0052Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	260A
Avalanche Energy Rating (Eas)	360 mJ
Max Junction Temperature (Tj)	150°C
Height	950μm
Length	6.15mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free