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IRFH7936TRPBF

IRFH7936TRPBF

IRFH7936TRPBF

Infineon Technologies

MOSFET N-CH 30V 20A PQFN

SOT-23

IRFH7936TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 3.1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2360pF @ 15V
Current - Continuous Drain (Id) @ 25°C 20A Ta 54A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 54A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 76A
Drain to Source Breakdown Voltage 30V
Height 1.1684mm
Length 5.2324mm
Width 6.1468mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price

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