IRFH8318TR2PBF

new-10%

Manufacturer part number:IRFH8318TR2PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 21A 5X6 PQFN

Case Package:SOT-23

Datasheet:IRFH8318TR2PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Supplier Device Package	PQFN (5x6)
Packaging	Cut Tape (CT)
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	3.1MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.6W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	3.6W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	3180pF @ 10V
Current - Continuous Drain (Id) @ 25°C	27A Ta 120A Tc
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	33ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	18 ns
Continuous Drain Current (ID)	27A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	3.18nF
Recovery Time	24 ns
Drain to Source Resistance	3.1mOhm
Rds On Max	3.1 mΩ
Nominal Vgs	1.8 V
Height	1.17mm
Length	5.85mm
Width	5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free