IRFI4019H-117P

new-10%

Manufacturer part number:IRFI4019H-117P

Manufacturer:Infineon Technologies

Description:MOSFET 2N-CH 150V 8.7A TO-220FP

Case Package:SOT-23

Datasheet:IRFI4019H-117P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-5 Full Pack
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	95MOhm
Subcategory	FET General Purpose Power
Max Power Dissipation	18W
Terminal Position	SINGLE
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	18W
Turn On Delay Time	7 ns
FET Type	2 N-Channel (Dual)
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	95m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id	4.9V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	810pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	6.6ns
Drain to Source Voltage (Vdss)	150V
Fall Time (Typ)	3.1 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	8.7A
Threshold Voltage	4.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	34A
Avalanche Energy Rating (Eas)	77 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Recovery Time	86 ns
FET Feature	Standard
Nominal Vgs	4.9 V
Height	9.02mm
Length	10.6172mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free