IRFI9Z24N

new-10%

Manufacturer part number:IRFI9Z24N

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 55V 9.5A TO-220FP

Case Package:SOT-23

Datasheet:IRFI9Z24N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Surface Mount	NO
Transistor Element Material	SILICON
Packaging	Tube
Published	1997
Series	HEXFET®
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	225
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	29W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	175m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.5A Tc
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	9.5A
Drain-source On Resistance-Max	0.175Ohm
Pulsed Drain Current-Max (IDM)	48A
DS Breakdown Voltage-Min	55V
Avalanche Energy Rating (Eas)	96 mJ
RoHS Status	Non-RoHS Compliant