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IRFL4315PBF

IRFL4315PBF

IRFL4315PBF

Infineon Technologies

IRFL4315PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFL4315PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.8W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 185m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
IRFL4315PBF Product Details

IRFL4315PBF Description

 

IRFL4315PBF MOSFET is a high-voltage, fast-switching MOSFET which is low in on-state resistance. IRFL4315PBF Infineon Technologies gives designers the highest quality combination of ruggedized design, speedy switching, cost-effectiveness, and low resistance to on-resistance. Due to the low resistance of IRFL4315PBF datasheet, it is suitable for high-current applications as well as for normal applications.

 

 

IRFL4315PBF Features

 

Surface mount

Available in tape and reel

Repetitive avalanche rated

Fast switching

Ease of paralleling

Simple drive requirements

 

 

IRFL4315PBF Applications

 

PFC

server/telecom power

FPD TV power

ATX power

Industrial power

 


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