IRFL4315PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFL4315PBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1999
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.8W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
185m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
420pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.6A Ta
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
RoHS Status
ROHS3 Compliant
IRFL4315PBF Product Details
IRFL4315PBF Description
IRFL4315PBF MOSFET is a high-voltage, fast-switching MOSFET which is low in on-state resistance. IRFL4315PBF Infineon Technologies gives designers the highest quality combination of ruggedized design, speedy switching, cost-effectiveness, and low resistance to on-resistance. Due to the low resistance of IRFL4315PBF datasheet, it is suitable for high-current applications as well as for normal applications.