IRFM460 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFM460 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-254-3, TO-254AA (Straight Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Tube
Published
2015
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
S-MSFM-P3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
250W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
270m Ω @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
19A Tc
Gate Charge (Qg) (Max) @ Vgs
190nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
19A
Drain-source On Resistance-Max
0.31Ohm
Pulsed Drain Current-Max (IDM)
76A
DS Breakdown Voltage-Min
500V
Avalanche Energy Rating (Eas)
1200 mJ
RoHS Status
Non-RoHS Compliant
IRFM460 Product Details
IRFM460 Description
The secret of International Rectifier's cutting-edge line of power MOSFET transistors is HEXFET? MOSFET technology. High trans conductance and very low on-state resistance are both achieved by the efficient geometry design. All of the well-known advantages of MOSFETs, including voltage control, incredibly quick switching, simple paralleling, and electrical parameter temperature stability, are also present in HEXFET transistors. They are suitable for nearly any application requiring high dependability, including switching power supply, motor controls, inverters, helicopters, audio amplifiers, high energy pulse circuits, and high energy converters. The completely isolated package of the HEXFET transistor eliminates the need for extra isolating material between the device and the heat sink. This lowers drain capacitance and increases thermal efficiency.