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IRFM460

IRFM460

IRFM460

Infineon Technologies

IRFM460 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFM460 Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-254-3, TO-254AA (Straight Leads)
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
Published 2015
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-MSFM-P3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 250W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 19A
Drain-source On Resistance-Max 0.31Ohm
Pulsed Drain Current-Max (IDM) 76A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 1200 mJ
RoHS Status Non-RoHS Compliant
IRFM460 Product Details

IRFM460 Description


The secret of International Rectifier's cutting-edge line of power MOSFET transistors is HEXFET? MOSFET technology. High trans conductance and very low on-state resistance are both achieved by the efficient geometry design. All of the well-known advantages of MOSFETs, including voltage control, incredibly quick switching, simple paralleling, and electrical parameter temperature stability, are also present in HEXFET transistors. They are suitable for nearly any application requiring high dependability, including switching power supply, motor controls, inverters, helicopters, audio amplifiers, high energy pulse circuits, and high energy converters. The completely isolated package of the HEXFET transistor eliminates the need for extra isolating material between the device and the heat sink. This lowers drain capacitance and increases thermal efficiency.



IRFM460 Features


  • Simple Drive Requirements

  • Ease of Paralleling

  • Hermetically Sealed

  • Electrically Isolated

  • Dynamic dv/dt Rating



IRFM460 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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