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IRFP4368PBF

IRFP4368PBF

IRFP4368PBF

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tube 1.85m Ω @ 195A, 10V ±20V 19230pF @ 50V 570nC @ 10V TO-247-3

SOT-23

IRFP4368PBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 1.85MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 520W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection DRAIN
Turn On Delay Time 43 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.85m Ω @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 19230pF @ 50V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 570nC @ 10V
Rise Time 220ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 260 ns
Turn-Off Delay Time 170 ns
Continuous Drain Current (ID) 350A
Threshold Voltage 4V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Dual Supply Voltage 75V
Recovery Time 200 ns
Nominal Vgs 4 V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.56000 $7.56
25 $6.19520 $154.88
100 $5.59100 $559.1
500 $4.68432 $2342.16
1,000 $4.07989 $4.07989
IRFP4368PBF Product Details

IRFP4368PBF Overview


The maximum input capacitance of this device is 19230pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 350A.When VGS=75V, and ID flows to VDS at 75VVDS, the drain-source breakdown voltage is 75V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 170 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 43 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRFP4368PBF Features


a continuous drain current (ID) of 350A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 170 ns
a threshold voltage of 4V


IRFP4368PBF Applications


There are a lot of Infineon Technologies
IRFP4368PBF applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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