IRFR3710ZPBF Description

The IRFR3710ZPBF is a 100V single N-channel HEXFET? Power MOSFET utilizing the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. Its features combine to make this design an extremely efficient and reliable device for a wide variety of applications.

IRFR3710ZPBF Features

• Advanced process technology

• Ultra-low on-resistance

• Repetitive avalanche allowed up to Tjmax

• 175°C Operating temperature

• Fast Switching

IRFR3710ZPBF Applications

• Induction furnaces

• Arc furnaces and arc welders

• Steel rolling mills

• Large motors with periodic loading

• Thyristor drives

• Automotive