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IRFS4410PBF

  • IRFS4410PBF
  • IRFS4410PBF

IRFS4410PBF

IRFS4410PBF

Infineon Technologies

IRFS4410PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFS4410PBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 200W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 50V
Current - Continuous Drain (Id) @ 25°C 88A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.81000 $3.81
10 $3.42400 $34.24
100 $2.84610 $284.61
500 $2.34500 $1172.5
1,000 $2.01096 $2.01096
IRFS4410PBF Product Details

IRFS4410PBF Description


IRFS4410PBF is a 100V Single N-Channel HEXFET Power MOSFET. The Infineon IRFS4410PBF can be applied in High-Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High-Speed Power Switching, and Hard Switched and High-Frequency Circuits due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRFS4410PBF is in the TO-252-3 package with 200W power dissipation.



IRFS4410PBF Features


  • Improved Gate, Avalanche, and Dynamic dV/dtRuggedness

  • Fully Characterized Capacitance and AvalancheSOA

  • Enhanced body diode dV/dt and dI/dt Capability

  • Lead-Free

  • Continuous Drain Current, VGS @ 10v: 88A



IRFS4410PBF Applications


  • High-Efficiency Synchronous Rectification in SMPS

  • Uninterruptible Power Supply

  • High-Speed Power Switching

  • Hard Switched and High-Frequency Circuits


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