IRFS4410PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFS4410PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2006
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
200W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
10m Ω @ 58A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
5150pF @ 50V
Current - Continuous Drain (Id) @ 25°C
88A Tc
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.81000
$3.81
10
$3.42400
$34.24
100
$2.84610
$284.61
500
$2.34500
$1172.5
IRFS4410PBF Product Details
IRFS4410PBF Description
IRFS4410PBF is a 100V Single N-Channel HEXFET Power MOSFET. The Infineon IRFS4410PBF can be applied in High-Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High-Speed Power Switching, and Hard Switched and High-Frequency Circuits due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRFS4410PBF is in the TO-252-3 package with 200W power dissipation.
IRFS4410PBF Features
Improved Gate, Avalanche, and Dynamic dV/dtRuggedness