IRFSL4229PBF

new-10%

Manufacturer part number:IRFSL4229PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 250V 45A TO-262

Case Package:SOT-23

Datasheet:IRFSL4229PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	TO-262
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	330W Tc
Element Configuration	Single
Power Dissipation	330W
Turn On Delay Time	18 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	48mOhm @ 26A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4560pF @ 25V
Current - Continuous Drain (Id) @ 25°C	45A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	31ns
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	45A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Input Capacitance	4.56nF
Drain to Source Resistance	48mOhm
Rds On Max	48 mΩ
Height	9.65mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
RoHS Status	RoHS Compliant