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IRFU9N20D

IRFU9N20D

IRFU9N20D

Infineon Technologies

MOSFET N-CH 200V 9.4A I-PAK

SOT-23

IRFU9N20D Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 86W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.4A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status Non-RoHS Compliant

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