IRG4BC20KD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC20KD Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
ULTRA FAST SOFT RECOVERY
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
60W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
37ns
JEDEC-95 Code
TO-220AB
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
16A
Turn On Time
88 ns
Test Condition
480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 9A
Turn Off Time-Nom (toff)
380 ns
Gate Charge
34nC
Current - Collector Pulsed (Icm)
32A
Td (on/off) @ 25°C
54ns/180ns
Switching Energy
340μJ (on), 300μJ (off)
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
250
$2.35044
$587.61
IRG4BC20KD Product Details
IRG4BC20KD Description
The IRG4BC20KD Transistor from Infineon Technologies is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode. It is designed for a high working frequency of more than 5kHz and a short-circuit rating of 10s at 125°C, VGE = 15V. The generation 4 IGBT design is more efficient and has tighter parameter dispersion than the previous generation.
IRG4BC20KD Features
The latest generation 4 IGBTs offer the highest power density motor controls possible