Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRG4BC30KDSTRLP

  • IRG4BC30KDSTRLP
  • IRG4BC30KDSTRLP

IRG4BC30KDSTRLP

IRG4BC30KDSTRLP

Infineon Technologies

IRG4BC30KDSTRLP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC30KDSTRLP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 260.39037mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRG4BC30KD-SPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 28A
Reverse Recovery Time 42 ns
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 100 ns
Test Condition 480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 67nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 60ns/160ns
Switching Energy 600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.809205 $1.809205
10 $1.706797 $17.06797
100 $1.610186 $161.0186
500 $1.519043 $759.5215
1000 $1.433060 $1433.06
IRG4BC30KDSTRLP Product Details

IRG4BC30KDSTRLP Description


BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE



IRG4BC30KDSTRLP Features


?Combining high switching speed and reduced conduction losses


? tighter parameter distribution and greater efficiency compared to earlier generations


?HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes are packaged with IGBT.


?Lead-Free



IRG4BC30KDSTRLP Applications


Switching applications


Related Part Number

IXGX60N60B2D1
IXYS
IXGX60N60B2D1
$0 $/piece
GPA025A120MN-ND
SemiQ
GPA025A120MN-ND
$0 $/piece
IXGH31N60
IXYS
IXGH31N60
$0 $/piece
MGP15N40CL
ON Semiconductor
MGP15N40CL
$0 $/piece
IXGR60N60C2
IXYS
IXGR60N60C2
$0 $/piece
GPA060A060MN-FD
SemiQ
GPA060A060MN-FD
$0 $/piece
IXGX12N90C
IXYS
IXGX12N90C
$0 $/piece
IXGH64N60A3
IXYS
IXGH64N60A3
$0 $/piece
IXGR40N60B
IXYS
IXGR40N60B
$0 $/piece
IRGI4056DPBF
Infineon Technologies
IRGI4056DPBF
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News