IRG4BC30S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC30S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
100W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-220AB
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
34A
Turn On Time
40 ns
Test Condition
480V, 18A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.6V @ 15V, 18A
Turn Off Time-Nom (toff)
1550 ns
Gate Charge
50nC
Current - Collector Pulsed (Icm)
68A
Td (on/off) @ 25°C
22ns/540ns
Switching Energy
260μJ (on), 3.45mJ (off)
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
300
$2.09370
$628.11
IRG4BC30S Product Details
IRG4BC30S Bipolar Transistor Description
The IRG4BC30S bipolar transistor from Infineon represents the state-of-art manufacturing technique by enclosing the part into a compact TO-220AB package. This bipolar transistor is designed to replace industry-standard G-3 IR IGBTs and can work at low frequencies yet remain high efficiency at the same time.
IRG4BC30S Bipolar Transistor Features
High efficiency
Designed to be a "drop-in" replacement for equivalent Industry-standard Generation 3 IR IGBTs