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IRG4BC40FPBF

IRG4BC40FPBF

IRG4BC40FPBF

Infineon Technologies

IRG4BC40FPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC40FPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature FAST SWITCHING
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 160W
Terminal Position SINGLE
Current Rating 49A
Number of Elements 1
Element Configuration Dual
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 26 ns
Transistor Application POWER CONTROL
Rise Time 18ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 240 ns
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 49A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 46 ns
Test Condition 480V, 27A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 27A
Turn Off Time-Nom (toff) 690 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 196A
Td (on/off) @ 25°C 26ns/240ns
Switching Energy 370μJ (on), 1.81mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 8.77mm
Length 10.54mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.08000 $4.08
10 $3.66700 $36.67
100 $3.00450 $300.45
500 $2.55768 $1278.84
1,000 $2.15708 $2.15708
IRG4BC40FPBF Product Details

IRG4BC40FPBF Description


Infineon Technologies manufactures the IRG4BC40FPBF, a 600V Ultrafast 1 to 8kHz IGBT. Process for hard switching with a medium operating frequency. In comparison to Generation 3, the Generation 4 IGBT design has a narrower parameter distribution and improved efficiency. It can be utilized in industrial, alternative energy, and power management, according to the IRG4BC40FPBF datasheet.



IRG4BC40FPBF Features


  • Lead-free

  • Industry-standard TO-220AB package

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

  • Fast: optimized for medium operating frequencies(1-5 kHz hard switching, >20kHz in resonant mode).



IRG4BC40FPBF Applications


  • Industrial

  • Alternative Energy

  • Power Management


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